IRG7S313U igbt equivalent, pdp trench igbt.
Key Parameters
l Advanced Trench IGBT Technology
VCE min
330
V
l Optimized for Sustain and Energy Recovery
VCE(ON) typ. @ IC = 20A
1.35
V
circuits in PDP applic.
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
IRP max @ TC= 25°C TJ max
160
A
150
°C
.
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